2N DC Current Gain. *hFE. IC=mA, VCE=10V. 30 – IC=10mA, VCE= . It is recommended that you completely review our Data Sheet(s) so as to. 2N datasheet, 2N circuit, 2N data sheet: MICRO-ELECTRONICS – NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES,alldatasheet. 2N Transistor Datasheet pdf, 2N Equivalent. Parameters and Characteristics.
|Published (Last):||10 December 2012|
|PDF File Size:||10.95 Mb|
|ePub File Size:||6.2 Mb|
|Price:||Free* [*Free Regsitration Required]|
NPN SILICON PLANAR TRANSISTOR
Williams, 9 October Teruya Avalanche transistor selection for long-term stability in streak camera sweep and pulser applications, 5 September The electric field causes migration of material in the high field region at the surface near the collector-base junction, creating the voltage instability. Makers of the Microchip: Vcbo as high as possible fewer devices: High current handling 5.
However transistors were avalanched long before this, as earlier papers below darasheet. I assume the reason for suggesting older devices are better, into which I read: Of the three transistors selected in paper A7, only the 2N is readily available in Instrum Vol 64, No. Older diffused-junction types sometimes do. Teruya Avalanche transistor selection for long-term stability in streak camera sweep and pulser applications, 5 September http: Woolston This excellent paper explores multiple Q-switch design topologies.
Vcbo close to Vceo Frequency at least MHz 7. Asian sources of cheap Zetex dafasheet transistors pedigree unknown.
2N Datasheet PDF – Boca Semiconductor
As with the authors of most papers, I have gone the route of selecting ordinary low cost transistors. TO is aka SOT54; manufacturer known only where stated abbreviations: Transistor selection – best transistor types for avalanche. Pinout best suited for low C, L Datashheet – final choice is usually determined from characterisation tests and burn-in.
Appendix B – Subnanosecond rise time pulse generators for the rich and poor. R – T R ansistor dstasheet criteria for avalanche. Larkin, Highland Technology Inc.
Data runs were typically 3 to 4 months long, with readings taken weekly. Potential source of low cost ZTX avalanche transistors: An emitter layer in the base layer is of thickness about six-tenths the thickness of the base layer.
Vcbo being close to Vceo’ http: The Zetexes are made in Russia, presumably on an old fab line. Stability on all types has been improved by power burn-in. Motorola, Zetex and National transistors were operated at microamperes pA [sic], and the Raytheon units were operated at 20 pA.
An automatic avalanche transistor burn-in tester allows power burn-in of up to transistors at a time. Data are collected from each run and stored. For a pockels driver requiring something in the order of a 3. A Documentary History of Fairchild Semiconductor.
Using a Tektronix curve tracer on the V range, I selected all transistors that had the highest breakdown voltage.
Also contains many other topics of interest http: Selection of avalanche transistors for the LHC Project. I intend to run more tests and measurements based on this paper.
Fast and RF transistors tend to work as well. All papers referencing this transistor typically originated from his research. I found paper [A22] only after writing all of this up. Unfortunately, like all earlier transistors, the edge of the collector-base junction was exposed, making it sensitive to leakage through surface contaminants, thus requiring hermetic seals or passivation to prevent degradation of the transistor’s adtasheet over time.
Note datasheet I have not bought from this source. A base layer in the surface dxtasheet the epitaxial layer is of thickness about one-fourth the thickness of the epitaxial layer. Kuthi, USA Sept