Transistors. 2SC Page 2. Page 3. This datasheet has been downloaded from: Datasheets for electronic components. 2SC datasheet, 2SC circuit, 2SC data sheet: ETC – PRE- AMPLIFIER, LOW LEVEL & LOW NOISE,alldatasheet, datasheet, Datasheet search site. 2SC NTE Equvilent NTEAP NPN audio transistor. NTEAP Silicon NPN Transistor Audio Amplifier. Switch (Compl to NTE). NTE Data Sheet.

Author: Akinogul Mizshura
Country: Iceland
Language: English (Spanish)
Genre: Education
Published (Last): 1 May 2016
Pages: 59
PDF File Size: 14.59 Mb
ePub File Size: 5.14 Mb
ISBN: 504-5-64185-342-6
Downloads: 7188
Price: Free* [*Free Regsitration Required]
Uploader: Tekora

A TO-5 transistor with a P D of 3 watts might be able to dissipate watts with a heat sink. The V EB rating isn’t usually a factor in choosing a substitute transistor.

a/2Sc+equivalent datasheet & applicatoin notes – Datasheet Archive

You can find transistor specs in data sheets available online. If you don’t have that particular type, a transistor cross-reference guide can sometimes help you to find a compatible, generic part. Just make sure to compare apples with apples.

Field-effect transistors come in three basic types: But if tdansistor original transistor has a high gain, try to match it.

2SC9014 PDF Datasheet ( 特性, スペック, ピン接続図 )

P D is the overall power the FET can dissipate through heat. There are three breakdown voltages: Bipolar junction transistors BJT s are the most common variety of transistor. Current gain is only occasionally significant when choosing a substitute transistor. You’ll find that fewer devices need to be stocked, and turnaround time can be reduced. Select a substitute with the same general range of values.

Actual circuit gain depends on other rransistor.

One of the following breakdown voltages is usually included in the specifications for a FET: In an enhancement type device, it’s an off-state current. You can organize the transistors into groups of drawers, each dedicated to a particular transistor outline. Pick a substitute FET with a rating at least as high as the original. The original transistor might need special ordering, or be discontinued and unavailable. However, the transistor’s data sheet will show you that.


V CB is always equal to or greater than V CE and you can use either of these maximum voltages to compare transistors. But you might already have a suitable substitute in your parts drawers. In a depletion type device, I DSS is an on-state current.


Small, TO or TO transistors, depending on their fabrication, can handle between about and mA. Datashewt is the same spec used for bipolar transistors. The first spec to consider is the Transistor Outline. Then, when you need to pick 2c9014 substitute for an original transistor, you can quickly home in on all your potential candidates. One measure of gain, called h FEis often used for comparing transistors. A junction transistor is a sandwich of “N” and “P” type semiconductors. The type number is often printed on the transistor, although product manufacturers sometimes have their own part numbers printed instead.

They also have double the input voltage drop since there are datazheet semiconductor junctions in series. De-soldering and replacing a transistor takes very little time. If the lead arrangement of a small replacement transistor differs from that of the the original, you can sometimes bend the transistor leads across one another to 2sv9014 them into the correct datashert in the circuit board.

A Transistor Outline number, or TOrefers 2sc0914 a transistor’s physical size, shape, and mounting style. Maximum Power, called P Dis the overall power a transistor can dissipate, through heat, without burning up.

You can use either of the above voltages when comparing FETs. It’s the direct current that flows into the drain terminal when the gate to source voltage is zero. Choose a substitute transistor with a maximum power rating at least as high as the original. More time is spent figuring out which one to replace and, sometimes, what to replace it with! BV DSS – the breakdown voltage between the Drain and the Source terminals when the gate is short-circuited to the source.


Minimum and maximum values are usually given. Choose a substitute transistor with a breakdown voltage rating at least as high as the original. During an avalanche, electrons in transisotr P-N transition regions are accelerated to energies so high that they hit bound electrons with enough force to free trahsistor, creating additional charge carriers and greatly multiplying the transistor current.

Finding a substitute replacement transistor isn’t difficult if you know the specs of the original transistor and organize your stock by specs instead of type numbers.

The following electrical specs are important when choosing a substitute BJT. It’s not a good idea to substitute a Darlington transistor for a non-Darlington type, or vice versa. Each of the three types listed above can be fabricated with either an N or a P conduction channel.

Be sure to substitute a FET of the same type as the original. At the maximum voltage, also called a breakdown voltage BVelectrons begin to avalanche in the transistor.

Today, FET acronyms abound but they usually signify only how the FET is constructed or improved upon; they don’t describe another basic type.

One of the following breakdown voltages is usually included in the specifications for a FET:. For a depletion-type FET, the gate-source bias voltage might be 0 V i. So, altogether, there are six types of field-effect transistors.