GT60N321 PDF

GT60N321 PDF

Product Index > Discrete Semiconductor Products > Transistors – IGBTs – Single > Toshiba Semiconductor and Storage GT60N(Q). Obsolete item. Photo Not. TOSHIBA GT60N(Q) | Transistor: IGBT; V; 60A; W; TO3P – This product is available in Transfer Multisort Elektronik. Check out our wide range of . GT60N 1. TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT. GT60N High Power Switching Applications. The 4th.

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For a day return due to quality issues: Multiple factors, such as the shipping method, number of items, and package weight, may influence the calculation of the final shipping costs. RS Components Statement of conformity. On-time Delivery Items will be shipped out within 7 days gt6n0321 placing your order. While we try to ensure product information is accurate, sellers may occasionally amend product information.

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The product does not contain any of the restricted substances in concentrations and applications banned by the Directive, and for components, the product is capable of being worked on at the higher temperatures required by lead—free soldering The restricted substances and maximum allowed concentrations in the homogenous material are, by weight: All Stars 0 All Stars 0.

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GT60N321 IGBT. Datasheet pdf. Equivalent

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The product does not contain any of the restricted substances in concentrations and applications banned by the Directive, and for components, the product is capable of being worked on at the higher temperatures required by lead—free soldering. The IGBT combines the simple gate-drive characteristics g6t0n321 the MOSFETs with the high-current and low—saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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GT60N IGBT. Datasheet pdf – Equivalent

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